Characterisation and nanophotonic device integration of droplet epitaxy quantum dots emitting in the telecom C-band

Synopsis

Quantum dots are well established as a source of single photons for applications in quantum cryptography. Having their emission in the telecommunication C-band (1530-1565 nm) is a desirable property as it allows for compatibility with existing low-loss fibre infrastructure. InAs/InP quantum dots grown by droplet epitaxy using metal organic vapour-phase epitaxy are the basis of the work presented in this talk with two main growth recipes explored. 

For these quantum dots to be high quality single photon sources it is advantageous to have high repetition rates which can be achieved with Purcell enhancement of quantum dot emission. A fabrication process for photonic crystal cavities in the InP material system is presented which produces high Q factor emission. Further fabrication development is presented which successfully integrates high density quantum dots on an InGaAsP interlayer in the photonic crystal cavities resulting in candidate quantum dots for Purcell enhancement.