Towards Purcell-enhanced readout of the T-center in Silicon

Synopsis

The T-center, a defect center in silicon, is a promising qubit candidate owing to its optical transition in the telecommunications band as well as it’s highly desirable host material, Silicon. Optical read-out and initialization of the T-center spin states is possible, however, read-out of the electron spin is inefficient because few photons are emitted upon changing the spin state. This hurdle can be overcome by implanting the T-center into a photonic crystal cavity in order to achieve Purcell-enhanced spin read-out. Such efforts are currently being made at SFU's Silicon Quantum Technology Group. In this talk I will discuss the design, fabrication and measurement of nanobeam cavities, 1-dimensional photonic crystals, which will serve to make efficient electron spin readout possible through Purcell-enhancement of the T-center.