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Special Seminar
Compositionally graded and diameter modulated magnetic nanowires for domain wall mediated spintronic devices
Farzad Nasirpouri
Faculty of Materials Engineering, Sahand University of Technology, Tabriz, Iran
Compositionally graded and diameter modulated magnetic nanowires for domain wall mediated spintronic devices
Jul 22, 2019 at 2:30PM
Synopsis
Magnetic nanowires have attracted much attention for magnetic random access memory, spin torque devices and domain-wall movement controlled based spintronic devices. “Domain wall traps” have been engineered and well-exploited in nanostrips by creating a geometrical trapping site, e.g. a single notch along a stripe, compared to diameter-modulated (DM) cylindrical magnetic nanowires (NWs) where multi-segmented DM-NWs have been generally studied. Template electrodeposition is an established and widely studied method for fabricating magnetic nanowires [1]. However, the diameter or compositionally modulated magnetic nanowires have been more recently exploited for versatile capability in manipulating domain wall movement. We have developed template electrodeposition [2] using anodic aluminium oxide membranes to produce the nanowires under particular conditions. Here is this talk; I focus on two types of nanowire systems studied in my group including (1) compositionally-graded FePt nanowires and (2) diameter-modulated nickel nanowires. This type of geometrically engineered nanowires exhibit potential efficiency for future novel spintronic devices in particular when assembled in arrays of nanowires as a practical three-dimensional memory device.
[1] F. Nasirpouri and A. Nogaret, Nanomagnetism and Spintronics, world sci. pub. Co, 2011.
[2] F. Nasirpouri, Electrodeposition of Nanostructured Materials, Springer International. Pub., Switzerland, 2017.
[3] A. Fardi, F Nasirpouri, C Bran, et al J Solid State Chem, 2016, 244, 35.
[4] F. Nasirpouri, SM Peighambari et al, Sci. Rep. (Nature), 2019, 9, 9010.