Lattice Mismatch and Strain Relaxation
No. |
First Author |
Citation |
Year |
| 133 | Mooney | “Characterization of solution-bonded GaAs/InGaAs/GaAs features on GaAs”, P. M. Mooney, K. L. Kavanagh, D. Owen, D. Lackner, B. Cawston-Grant, A. F. Basile, O. Salehzadeh and S. P. Watkins, Semiconductor Science and Technology 29, 075009 (2014). |
2014 |
| 129 | Salehzadeh | “Geometric limits of coherent III-V core/shell nanowires”, O. Salehzadeh, K. L. Kavanagh, S. P. Watkins, J. Appl. Phys. 114, 054301 (2013). | 2013 |
| 128 | Salehzadeh | “Growth and strain relaxation of GaAs and GaP nanowires with GaSb shells”, Salehzadeh, O.; Kavanagh, K.L.; Watkins, S.P. J. Appl. Phys. 113, 134309 (2013). | 2013 |
| 122 | Dayeh | “Direct Measurement of Coherency Limits for Strain Relaxation in Heteroepitaxial Core/Shell Nanowires”, S. A. Dayeh, W. Tang, F. Boioli, K. L. Kavanagh, H. Zheng, J. Wang, N. H. Mack, G. Swadener, J. Yu Huang, L. Miglio, King-Ning Tu, and S. T. Picraux, Nano Lett. 13 (2012) 1869. | 2012 |
| 118 | Kavanagh | “Faster radial strain relaxation in InAs-GaAs core-shell heterowires”, Karen L. Kavanagh, Igor Saveliev, Marina Blumin, Greg Swadener, and Harry E. Ruda, J. Appl. Phys. 111, 044301 (2012). | 2012 |
| 115 | Kavanagh | “Transport and strain relaxation in wurtzite InAs-GaAs core-shell heterowires”, K.L. Kavanagh, J. Salfi, I. Savelyev, M. Blumin, H.E. Ruda, Appl. Phys. Lett. 98 (2011) 152103. | 2011 |
| 49 | Goldman | "Effects of GaAs Substrate Misorientation on Strain Relaxation in InxGa1-xAs-based heterostructures", R.S. Goldman, K.L. Kavanagh, H.H. Wieder, S.N. Ehrlich, R.M. Feenstra, J. Appl. Phys. 83(10)(1998) 5137-5149. | 1998 |
| 46 | Li NY | "Tensile strain relaxation in GaNxP1-x(x < 0.1) grown by chemical beam epitaxy", N.Y. Li, W.S. Wong, D.H. Tomich, K.L. Kavanagh and C.W. Tu, presented at the Physics and Chemistry of Semiconductor Interfaces Conference, Jan 1996, La Jolla, CA, J. Vac. Sci Technol. B 14 (1996) 2952. | 1996 |
| 43 | Goldman | "Correlation of buffer strain relaxation modes with transport properties of two- dimensional electron gases", R.S. Goldman, K.L. Kavanagh, H.H. Wieder, V.M. Robbins, S.N. Ehrlich, R.M. Feenstra, J. Appl. Phys. 80 (1996) 6849-54. | 1996 |
| 42 | Rich | "Influence of GaAs(001) Substrate Misorientation Towards (111) on the Optical Properties of InxGa1-xAs/GaAs", D.H. Rich, K. Rammohan, Y. Tang, H.T. Lin, R.S. Goldman, H.H. Wieder, and K.L. Kavanagh, J. Vac. Sci. Tech. B. 13 (4), (1995) 1766- 1772. | 1995 |
| 41 | Rammohan | "Study of µm-Scale Spatial Variations in Strain of a Compositionally Step-graded InxGa1-xAs/GaAs(100) Heterostructure", K. Rammohan, D.H. Rich, R.S. Goldman, J.Chen, H.H. Wieder, and K.L. Kavanagh, Appl. Phys. Lett., 66(7), (1995) 869-871. | 1995 |
| 40 | Rammohan | "Relaxation-Induced Polarized Luminescence From InxGa1-xAs Films Grown on GaAs(001)", K. Rammohan, Y. Tang, D.H. Rich, R.S. Goldman, H.H. Wieder, and K.L. Kavanagh, Phys. Rev. B., 51 (8), (1995) 5033-5037. | 1995 |
| 39 | Goldman | "Correlation of Anisotropic Strain Relaxation With Substrate Misorientation Direction at InGaAs/GaAs(001) Interfaces", R.S. Goldman, H.H. Wieder, and K.L. Kavanagh, Appl. Phys. Lett., 67(3), (1995) 344-346. | 1995 |
| 37 | Lavoie | "Relationship Between In-Situ Surface Morphology and Strain Relaxation During Growth in InGaAs Strained Layers", C. Lavoie, T. Pinnington, E. Nodwell, T. Tiedje, R.S. Goldman, K.L. Kavanagh, and J.L. Hutter, Appl. Phys. Lett., 67 (1995) 3744- 3746. | 1995 |
| 35 | Raisanen | "Optical Detection of Misfit Dislocation-Induced Deep Levels at InGaAs/GaAs Heterojunctions", A. Raisanen, L.J. Brillson, R.S. Goldman, K.L. Kavanagh, and H.H. Wieder, Appl. Phys. Lett., 64 (26), (1994) 3572-3574. | 1994 |
| 34 | Raisanen | "Strain Relaxation Induced Deep Levels in In1-xGaxAs Thin Films", A. Raisanen, L.J. Brillson, R.S. Goldman, K.L. Kavanagh, and H.H. Wieder, J. Vac. Sci. Technol. A, 12 (4), (1994) 1050-1053). | 1994 |
| 32 | Goldman | "Anisotropic Structural, Electronic, and Optical Properties of InGaAs Grown by Molecular Beam Epitaxy on Misoriented Substrates", R.S. Goldman, H.H. Wieder, K.L. Kavanagh, K. Rammohan, and D.H. Rich, Appl. Phys. Lett., 65 (11), (1994) 1424- 1426. | 1994 |
| 31 | Kavanagh | "Strain Relaxation in Compositionally Graded InGaAs/GaAs Heterostructures", K.L. Kavanagh, R.S. Goldman, and J.C.P. Chang, invited talk presented at the Scanning Microscopy Workshop, Toronto, Canada (May 9-11, 1994); Scanning Microscopy, 8 (1), (1994) 905-912. | 1994 |
| 27 | Chang | "Multiple Dislocation Loops in Linearly Graded InxGa1-xAs (0<0.53) on GaAs and InxGa1-xAs (0<0.32) on GaP", J.C.P. Chang, T.P. Chin, C.W. Tu, and K.L. Kavanagh, Appl. Phys. Lett., 63 (4), (1993) 500-502. | 1993 |
| 25 | Chen | "Modulation Doped In0.3Ga0.7As/In0.29Al0.71As Heterostructures Grown on GaAs by Step Grading", Jianhui Chen, J.M. Fernandez, J.C.P. Chang, K.L. Kavanagh, and H.H. Wieder, Semiconductor Sci. Technol., 7 (1992) 601-603. | 1992 |
| 24 | Chang | "Strain Relaxation of Compositionally Graded InxGa1-xAs Buffer Layers for Modulation-Doped In0.3Ga0.7As/ In0.29Al0.71As Heterostructures", J.C.P. Chang, Jianhui Chen, J.M. Fernandez, H.H. Wieder, and K.L. Kavanagh, Appl. Phys. Lett., 60 (9), (1992) 1129-1131. | 1992 |
| 22 | Kavanagh | "Lattice Tilt and Dislocations in Compositionally Step-Graded Buffer Layers for Mismatched InGaAs/GaAs Heterointerfaces", K.L. Kavanagh, J.C.P. Chang, J. Chen, J.M. Fernandez, and H.H. Wieder, J. Vac. Sci. Technol. B, 10 (4), (1992) 1820-1823. | 1992 |
| 20 | Chang | "High-resolution X-ray Diffraction of InAIAs/InP Superlattices Grown by Gas-Source Molecular-Beam Epitaxy", J.C. P. Chang, T.P. Chin, K.L. Kavanagh, and C.W. Tu, Appl. Phys. Lett., 58 (1990) 1530-1532. | 1990 |
| 19 | Kavanagh | "Lattice Strain from Substitutional Ga and from Holes in Heavily Doped Si:Ga", K.L. Kavanagh and G.S. Cargill III, Phys. Rev. B. 45 (7), (1990) 3323-3331. | 1990 |
| 16 | Cargill | "Lattice Compression from Conduction Electrons in Heavily Doped Si:As", G.S. Cargill III, J. Angilello, and K.L. Kavanagh, Phys. Rev. Letts., 61, (15), (1988) 1748-1751. | 1988 |
| 15 | Kavanagh | "Asymmetries in Dislocation Densities, Surface Morphology, and Strain of GaInAs/GaAs Single Heterolayers", K.L. Kavanagh, M.A. Capano, L.W. Hobbs, J.C. Barbour, P.M.J. Maree, W. Schaff, J.W. Mayer, D. Pettit, J.M. Woodall, J.A. Stroscio, and R.M. Feenstra, J. Appl. Phys., 64(10), (1988) 4843-4852. | 1988 |
| 13 | Ramberg | "Lattice Strained Heterojunction InGaAs/GaAs Bipolar Structures: Recombination Properties and Device Performance", L.P. Ramberg, P.M. Enquist, Y-K. Chen, F.E. Najjar, L.F. Eastman, E.A. Fitzgerald, and K.L. Kavanagh, J. Appl. Phys., 61 (3), (1987) 1234-1236 | 1987 |
| 12 | Batson | "Local Bonding and Electronic Structure Obtained from Electron Energy Loss Scattering", P.E. Batson, K.L. Kavanagh, C.Y. Wong, and J.M. Woodall, Ultramicroscopy, 22 (1987) 1234-1236. | 1987 |
| 11 | Maree | "Thin Epitaxial Ge-Si(III) Films: Study and Control of Morphology", P.M.J. Maree, K. Nakagawa, F.M. Mulders, J.F. van der Veen, and K.L. Kavanagh, Surface Sci.,191 (1987) 305-328. | 1987 |
| 9 | Maree | "Generation of Misfit Dislocations in Semiconductors", P.M.J. Maree, J.C. Barbour, J.F. van der Veen, K.L. Kavanagh, C.W.T. Bulle-Lieuwma, and M.P.A. Viegers, J. Appl. Phys. 62 (11), (1987) 4413-4420. | 1987 |
| 6 | Batson | "Electron-Energy-Loss Scattering Near a Single Misfit Dislocation at the GaAs/GaInAs Interface", P.E. Batson, K.L. Kavanagh, J.M. Woodall, and J.W. Mayer, Phys. Rev. Lett.,57 (21), (1986) 2729-2732. | 1986 |
| 4 | Woodall | "Fermi-Level Pinning by Misfit Dislocations at GaAs Interfaces", J.M. Woodall, G.D. Pettit, T.N. Jackson, C. Lanza, K.L. Kavanagh, and J.W. Mayer, Phys. Rev. Letts., 51 (19), (1983) 1783-1786. | 1983 |