The MOCVD facility at SFU includes two machines. The most recent is a high speed rotating disk system manufacturing by Structured Materials. THis system is currently being used to investigate the optical properties of pure indium nitride, but has the abilitiy to grow a wide range of materials. A second system consists of a horizontal reactor geometry dedicated to the growth of oxide materials such as ZnO and related semiconductors for potential quantum information applications. A, wide range of characterization tools including high resolution XRD, atomic force microscopy, SEM, TEM, low temperature photoluminescence, and various electrical characterization techniques are available.  In collaboration with the group of K. Kavanagh, our group has achieved a high degree of success characterizing the electrical properties of indivifual nanowires using a nanoprobe inside a scanning electron microscope.